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Compact SOT23 PNP transistor ElecSuper S9012 designed for general purpose electronic circuits

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Compact SOT23 PNP transistor ElecSuper S9012 designed for general purpose electronic circuits

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 150MHz

type : PNP

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 25V

Operating Temperature : -

Description : Bipolar (BJT) Transistor PNP 25V 500mA 150MHz 0.3W Surface Mount SOT-23

Mfr. Part # : S9012

Model Number : S9012

Package : SOT-23

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Product Overview

The ElecSuper S9012 is a PNP bipolar junction transistor designed for general-purpose applications. Complementary to the S9013, this transistor offers a power dissipation of 300mW, ensuring high stability and reliability. It is housed in a compact SOT-23 small outline plastic package, suitable for various electronic circuits.

Product Attributes

Brand: ElecSuper
Product Type: PNP Transistor
Package Type: SOT-23 Plastic-Encapsulate
Material: Epoxy UL: 94V-0
Mounting Position: Any

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
Absolute Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified)
Collector-Base Voltage	VCBO	-40	V
Collector-Emitter Voltage	VCEO	-25	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current-Continuous	IC	-500	mA
Collector Power Dissipation	PC	300	mW
Junction Temperature	Tj	150
Storage Temperature	TSTG	-55~150
Thermal Resistance (Junction to Ambient)	RJA	416	/W
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	-40	V	IC=-100uA, IE=0
Collector-emitter breakdown voltage	V(BR)CEO	-25	V	IC=-1mA, IB=0
Emitter-base breakdown voltage	V(BR)EBO	-5	V	IE=-100uA, IC=0
Collector cut-off current	ICEO	-100	nA	VCE=-20V, IB=0
Collector cut-off current	ICBO	-100	nA	VCB=-40V, IE=0
Emitter cut-off current	IEBO	-100	nA	VEB=-5V, IC=0
DC current gain	hFE	120 ~ 400		VCE=-1V, IC=-50mA
Collector-emitter saturation voltage	VCE(sat)	-0.60	V	IC=-500mA, IB=-50mA
Base-emitter saturation voltage	VBE(sat)	-1.20	V	IC=-500mA, IB=-50mA
Transition frequency	fT	150	MHz	VCE=-6V, IC=-20mA, f=30MHz
Collector output capacitance	COB	5	pF	VCB=-10V, IE=0, f=1MHz
Classification of hFE
Rank		Range
L		120~200
H		200~350
J		300~400

Dimensions and Patterns (SOT-23)

Symbol	Dimensions (mm)	Symbol	Dimensions (mm)
A	0.900 - 1.150	E1	2.250 - 2.550
A1	0.900 - 1.050	e	0.950 (TYP)
b	0.300 - 0.500	e1	1.800 - 2.000
c	0.080 - 0.150	L	0.550 (REF)
D	2.800 - 3.00	L1	0.300 - 0.500
E	1.200 - 1.400		0 - 8
	0.80		2.02
	1.90		0.60

Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only.

2410121717_ElecSuper-S9012_C5249678.pdf

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