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Compact dual digital transistor ROHM UMG11NTR with 50V supply voltage and 100mA collector current

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Compact dual digital transistor ROHM UMG11NTR with 50V supply voltage and 100mA collector current

Output Voltage(VO(on)) : 300mV

Input Resistor : 2.86kΩ

Resistor Ratio : 21

Number : -

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353-5

Mfr. Part # : UMG11NTR

Model Number : UMG11NTR

Package : SOT-353-5

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Product Overview

The EMG11 / UMG11N are dual digital transistors housed in compact SOT-553 (EMT5) or SOT-353 (UMT5) packages. These devices integrate two DTC123J chips, offering reduced mounting cost and area. They are designed for applications such as inverters, interfaces, and drivers, providing efficient switching capabilities with a maximum supply voltage of 50V and a maximum collector current of 100mA.

Product Attributes

Brand: ROHM
Package Types: SOT-553 (EMT5), SOT-353 (UMT5)

Technical Specifications

Parameter	Symbol	Values	Unit	Notes
General Ratings
Supply voltage	VCC	50	V
Input voltage	VIN	-5 to 12	V
Output current	IO	100	mA
Collector current (MAX.)	IC(MAX)	100	mA	*1
Power dissipation (EMG11)	PD	150	mW/Total	23
Power dissipation (UMG11N)	PD	150	mW/Total	23
Junction temperature	Tj	150
Range of storage temperature	Tstg	-55 to +150
Electrical Characteristics (Ta = 25C)
Input voltage (VI(off))	VI(off)	-	0.5	V	VCC = 5V, IO = 100A
Input voltage (VI(on))	VI(on)	1.1	-	V	VO = 0.3V, IO = 5mA
Output voltage (VO(on))	VO(on)	-	100	300	mV	IO = 5mA, II = 0.25mA
Input current	II	-	3.6	mA	VI = 5V
Output current (IO(off))	IO(off)	-	500	nA	VCC = 50V, VI = 0V
DC current gain	GI	80	-	-	VO = 5V, IO = 10mA
Input resistance	R1	1.54	2.2	2.86	k
Resistance ratio	R2/R1	17	21	26	-
Transition frequency	fT	-	250	-	MHz	VCE = 10V, IE = -5mA, f = 100MHz (*1)
Packaging Specifications
Part No.	Package	Package size	Taping code	Reel size (mm)	Tape width (mm)	Basic ordering unit.(pcs)	Marking
EMG11	SOT-553 (EMT5)	1616	T2R	180	8	8000	G11
UMG11N	SOT-353 (UMT5)	2021	TR	180	8	3000	G11

*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.

2203101903_ROHM-UMG11NTR_C2981759.pdf

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