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High current KY BT139-800E TRIAC designed for washing machines vacuum cleaners and solid state relays

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High current KY BT139-800E TRIAC designed for washing machines vacuum cleaners and solid state relays

Holding Current (Ih) : 25mA

Current - Gate Trigger(Igt) : 10mA

Voltage - On State(Vtm) : 1.55V

Average Gate Power Dissipation (PG(AV)) : 1W

Current - On State(It(RMS)) : 16A

Peak off - state voltage(Vdrm) : 800V

Current - Surge(Itsm@f) : 160A@16.7ms

SCR Type : 1 TRIAC

Gate Trigger Voltage (Vgt) : 1.5V

Operating Temperature : -40℃~+125℃

Description : TRIAC 800V 16A Through Hole TO-220

Mfr. Part # : BT139-800E

Model Number : BT139-800E

Package : TO-220

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Product Overview

The ShenZhenHanKingyuan Electronic BT139 Series TRIACs are high-performance 4-quadrant TRIACs designed for AC power control applications. With an RMS on-state current of 16A and a peak off-state voltage of up to 800V, these TRIACs offer reliable switching and control in various electronic systems. They are suitable for applications such as washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic
  • Origin: Shenzhen
  • Product Line: BT139 Series
  • Trademark: KY logo

Technical Specifications

ParameterConditionsBT139-600BT139-800Unit
Repetitive Peak Off-State Voltage (VDRM/VRRM)600800V
R.M.S On-State Current (IT(RMS))Tc=110C1616A
Surge On-State Current (ITSM)160/168160/168A
It for fusingTp=10ms144144As
Average Gate Power Dissipation (PG(AV))Tj=125C11W
Peak Gate Current (IGM)Tj=125C44A
Operating Junction Temperature (Tj)-40~125-40~125C
Storage Temperature (TSTG)-40~150-40~150C
Repetitive Peak Off-State Current (IDRM)Tj=25C55uA
Repetitive Peak Off-State Current (IDRM)Tj=125C11mA
Repetitive Peak Reverse Current (IRRM)Tj=25C55uA
Repetitive Peak Reverse Current (IRRM)Tj=125C11mA
Forward "on" voltage (VTM)IT=35A, tp=380us1.551.55V
Gate trigger voltage (VGT)VD=12V, RL=301.51.5V
Critical-rate of rise of commutation current (di/dt)I,II,III IG=2XIGT,tr 100ns,F=100Hz5050A /us
Critical-rate of rise of commutation current (di/dt)IV IG=2XIGT,tr 100ns,F=100Hz1010A /us
Gate trigger current (IGT)I,II,III VD=12V, RL=3055mA
Gate trigger current (IGT)IV VD=12V, RL=301010mA
Holding current (IH)IT=0.2A1010mA
Gate non-trigger voltage (VDG)ALL VD=VDRM, RL=30, TJ=125C0.20.2V
Critical-rate of rise of commutation voltage (dv/dt)TJ=125C, VD=2/3VDRM, Gate open circuit55V/us
Thermal resistance Junction to case (Rth(j-c))1.11.1C/W
Thermal resistance Junction to ambient (Rth(j-a))5050C/W

2410121251_KY-BT139-800E_C2831697.pdf


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